Micron’s vision is to transform how the world uses information to enrich life for all. Join an inclusive team focused on one thing: using our expertise in the relentless pursuit of innovation for customers and partners. The solutions we create help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can spark the very innovation we are pursuing.
What you will do
High-K film is a challenging process in replacement gate (RG) 3D NAND technology which determines device performance. The key focus for High K development projects will be delivering new films or new film stacks that enhances the charge storage capability and retention characteristics. In 3D NAND, high-k film is formed vertically which provides additional challenges in uniform deposition of high-k dielectric via ALD (Atomic Layer Deposition) in HAR (high-aspect-ratio) structures.
As a diffusion engineer, the expectation of this project involves selection of precursor, process optimization and introduction of new schemes for high k film engineering. This project also involves extensive film characterization that ranges from macroscopic to microscopic details and electrical validations. Common characterizations for High-k such as TEM, SEM, I-V, Hg probe, SIMS, XPS etc. Another challenge for High K will be on variation improvement which covers wafer-to-wafer, wafer-in-wafer and step coverage.
Primary scope of the project would be to execute design of experiments, analyzing data through both blanket characterization and device characterization and basic understanding on wafer fabrication operating system.
- Job type:Internships
- Closing Date:30th Apr 2021, 6:00 pm